Title :
Low threshold 1.5 mu m quantum well lasers grown by atmospheric pressure MOCVD with tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP)
Author :
Holmes, A.L. ; Mack, M.P. ; DenBaars, Steven P. ; Coldren, Larry A. ; Bowers, John E.
Abstract :
TBA and TBP are liquid organometallic sources that are a safer alternative to arsine and phosphine. Using TBA and TBP, the authors have successfully grown lattice matched In0.53Ga0.47As/InP single quantum well lasers emitting at 1.5 mu m with a threshold current density of 220 A/cm2 for broad area devices 3.5 mm in length.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; semiconductor quantum wells; vapour phase epitaxial growth; 1.5 micron; In 0.53Ga 0.47As-InP; MOCVD; atmospheric pressure; broad area devices; liquid organometallic sources; single quantum well lasers; tertiarybutylarsine; tertiarybutylphosphine; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930230
