Title :
Modeling base crowding in a bipolar transistor
fDate :
3/1/1973 12:00:00 AM
Abstract :
It is shown that in a model of a bipolar transistor with a rectangular configuration, the base-crowding effect may be represented by a diode and a resistor in parallel between the internal base point and the external base connection with an accuracy of better than four percent.
Keywords :
Bipolar transistors; Boundary conditions; Circuits; Diodes; Electron devices; Equations; Resistors; Strips; Tellurium; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1973.17647
