DocumentCode
1044843
Title
Modeling base crowding in a bipolar transistor
Author
Groendijk, H.
Volume
20
Issue
3
fYear
1973
fDate
3/1/1973 12:00:00 AM
Firstpage
329
Lastpage
330
Abstract
It is shown that in a model of a bipolar transistor with a rectangular configuration, the base-crowding effect may be represented by a diode and a resistor in parallel between the internal base point and the external base connection with an accuracy of better than four percent.
Keywords
Bipolar transistors; Boundary conditions; Circuits; Diodes; Electron devices; Equations; Resistors; Strips; Tellurium; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1973.17647
Filename
1477304
Link To Document