• DocumentCode
    1044852
  • Title

    Subsurface breakdown device reliability

  • Author

    Mar, Jerry

  • Author_Institution
    INTEL Corporation, Santa Clara, Calif.
  • Volume
    20
  • Issue
    3
  • fYear
    1973
  • fDate
    3/1/1973 12:00:00 AM
  • Firstpage
    330
  • Lastpage
    331
  • Abstract
    New data from special bipolar junctions that breakdown below the Si-SiO2interface are described. The devices were broken down both in a dc and pulse fashion, and junction degradation in the form of increased reverse leakage and reduced minority carrier lifetime was investigated. No degradation was observed.
  • Keywords
    Circuits; Degradation; Diodes; Electric breakdown; Enterprise resource planning; Equations; P-n junctions; Resistors; Tellurium; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1973.17648
  • Filename
    1477305
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1044852