Title :
Piezoresistive effect in vertical Hall cell
Author :
Maenaka, Kazusuke
Author_Institution :
Dept. of Electron., Kobe City Coll. of Technol., Japan
Abstract :
The offset voltage shift in Hall cells due to a mechanical strain (piezoresistive effect) was studied. The experiment shows that the vertical Hall effect, which has a compatible structure with a bipolar integrated circuit, has an extremely small offset voltage shift against mechanical strain in contrast with conventional Hall cells.
Keywords :
Hall effect transducers; electric sensing devices; piezoresistance; mechanical strain; offset voltage shift; piezoresistive effect; vertical Hall cell;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930256
