Title :
Single-electron memory
Author :
Nakazato, Kazuo ; Blaikie, R.J. ; Cleaver, J.R.A. ; Ahmed, Hameeza
Author_Institution :
Cambridge Lab., Hitachi Europe Ltd., UK
Abstract :
A single-electron memory cell, in which one bit of information is represented by +n and -n electron number states, is described. An experimental memory circuit for n approximately=100 was fabricated and the basic operation was confirmed at a temperature of 30 mK. This structure can be modified to operate with n=1.
Keywords :
integrated memory circuits; semiconductor storage; tunnelling; 30 mK; Coulomb blockage effect; GaAs; delta-doped layer; electron number states; gate capacitor; low temperature operation; memory circuit; multiple tunnel junction; side-gated structures; single-electron memory cell;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930258
