Title :
High temperature operation of 1.3 mu m GaInAsP/InP GRINSCH strained-layer quantum well lasers
Author :
Namegaya, T. ; Kasukawa, A. ; Iwai, N. ; Kikuta, T.
Author_Institution :
Yokohama R&D Labs., Furakaw Electr. Co. Ltd., Japan
Abstract :
The well number of 1.3 mu m GaInAsP/InP strained-layer GRINSCH quantum well lasers has been experimentally investigated in terms of the temperature dependence of the threshold current. A very high CW operating temperature of 170 degrees C with a threshold current of 46.2 mA was obtained for an HR coated laser with eight wells.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; gradient index optics; indium compounds; laser transitions; semiconductor lasers; 1.3 micron; 170 degC; 46.2 mA; CW operating temperature; GRIN; GRINSCH; GaInAsP-InP; HR coated laser; high temperature operation; quantum well lasers; semiconductor lasers; separate confinement heterostructure; strained-layer; temperature dependence; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930263
