Title :
Effects of lateral surface generation on the MOS-C linear-sweep and C-t transient characteristics
Author :
Pierret, R.F. ; Small, D.W.
Author_Institution :
Purdue University, West Lafayette, Ind.
fDate :
4/1/1973 12:00:00 AM
Abstract :
Observed effects of lateral surface generation on the MOS-C C-t transient and linear-sweep C-VGcharacteristics are noted and explained in terms of a qualitative model that emphasizes the heretofore ignored role of outer oxide surface ions. It is suggested that the lateral generation component is functionally more complex than previously conceived, and that this fact can lead to erroneous conclusions in the interpretation of deep depletion data.
Keywords :
Atmosphere; Capacitance measurement; Character generation; Charge carrier lifetime; Electrostatics; MOS capacitors; Nitrogen; Production; Testing; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1973.17670
