Title :
Pattern design of power transistors
Author_Institution :
Fujitsu, Ltd., Kobe, Japan
fDate :
4/1/1973 12:00:00 AM
Abstract :
The distribution of the emitter current density along the emitter stripe in the comb structure has been analytically obtained by taking into account the junction temperature and the sheet resistance of the diffused base layer, From this result the optimum length of the emitter stripe has been obtained.
Keywords :
Atmospheric measurements; Contact resistance; Current density; Electrodes; Electrons; Pattern analysis; Power transistors; Pulse measurements; Silicon; Temperature distribution;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1973.17671
