DocumentCode :
1045123
Title :
Picosecond pulse shaping and compression with FETs
Author :
Hafdallah, H. ; Ouslimani, A. ; Vernet, G. ; Adde, R.
Author_Institution :
Inst. d´Electronique Fondamentale, Univ. Paris-Sud, Orsay, France
Volume :
29
Issue :
4
fYear :
1993
Firstpage :
414
Lastpage :
415
Abstract :
A simple picosecond pulse shaping and compression circuit with a 0.3 mu m GaAs MESFET is reported. A 2 V amplitude negative pulse with full width at half maximum of approximately 30 ps is obtained at the 50 Omega output. The observed pulse shaping and the pulse width compression factor GPW>or=2.6 show the beneficial influence of the strongly nonlinear regime of the FET on the performances. The results and further pulse narrowing are discussed using time domain simulations of the pulser.
Keywords :
field effect transistor circuits; pulse shaping circuits; 0.3 micron; 2 V; 30 ps; GaAs; MESFET; picosecond pulse shaping; pulse width compression; time domain simulations;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19930277
Filename :
274812
Link To Document :
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