• DocumentCode
    1045135
  • Title

    91 GHz SiGe HBTs grown by MBE

  • Author

    Gruhle, A. ; Kibbel, H.

  • Author_Institution
    Daimler-Benz AG, Res. Centre Ulm, Germany
  • Volume
    29
  • Issue
    4
  • fYear
    1993
  • Firstpage
    415
  • Lastpage
    417
  • Abstract
    Si-SiGe heterojunction bipolar transistors (HBTs) have been fabricated with their complete layer structure grown by MBE without interruption. The maximum measured transit frequency fT was 91 GHz and fmax reached 65 GHz. These are the fastest silicon transistors reported to date in terms of both fT and fmax figures.
  • Keywords
    Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; molecular beam epitaxial growth; semiconductor growth; semiconductor materials; silicon; solid-state microwave devices; 65 GHz; 91 GHz; EHF; HBTs; MBE; MW-Wake operation; Si-SiGe; heterojunction bipolar transistors; millimetre wave range;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930278
  • Filename
    274813
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1045135