• DocumentCode
    1045147
  • Title

    Logarithmic time dependence of pMOSFET degradation observed from gate capacitance

  • Author

    Ling, C.H. ; Yeow, Y.T. ; Ah, L.K.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
  • Volume
    29
  • Issue
    4
  • fYear
    1993
  • Firstpage
    418
  • Lastpage
    420
  • Abstract
    Hot-carrier degradation in pMOSFETs is observed from an increase in gate overlap capacitance due to trapped electrons in the gate oxide inverting a portion of the channel near the stressed junction. The logarithmic time growth of the overlap capacitance, and hence of the trapped charge, is reported.
  • Keywords
    capacitance; electron traps; hot carriers; insulated gate field effect transistors; PMOS devices; gate overlap capacitance; gate oxide; hot carrier degradation; logarithmic time growth; p-channel device; pMOSFET degradation; time dependence; trapped charge; trapped electrons;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930280
  • Filename
    274815
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1045147