DocumentCode :
1045154
Title :
Transistor performance in intense magnetic fields
Author :
Hudson, W.R. ; Meyn, E.H. ; Schultz, C.W.
Author_Institution :
NASA Lewis Research Center, Cleveland, Ohio
Volume :
6
Issue :
3
fYear :
1970
fDate :
9/1/1970 12:00:00 AM
Firstpage :
704
Lastpage :
704
Abstract :
The forward current transfer ratio 
of a germanium bipolar transistor is reduced by the application of a magnetic field. This reduction is greatest when the magnetic vector is perpendicular to the direction of the minority carrier motion through the base region. Electronic instruments which are operated in a strong magnetic field will be adversely affected.
of a germanium bipolar transistor is reduced by the application of a magnetic field. This reduction is greatest when the magnetic vector is perpendicular to the direction of the minority carrier motion through the base region. Electronic instruments which are operated in a strong magnetic field will be adversely affected.Keywords :
Magnetic field effects; Semiconducting devices; Bipolar transistors; Degradation; Fluctuations; Germanium alloys; Instruments; Iron; Magnetic fields; Magnetic noise; Magnetic separation; P-n junctions;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1970.1066965
Filename :
1066965
Link To Document :
