• DocumentCode
    1045176
  • Title

    Five different modes of high-field domains due to field-dependent carrier diffusion

  • Author

    Hasuo, Shinya ; Ohmi, Tadahiro ; Horimatsu, Tetsuo

  • Author_Institution
    Fujitsu Laboratories, Ltd., Kawasaki, Japan
  • Volume
    20
  • Issue
    5
  • fYear
    1973
  • fDate
    5/1/1973 12:00:00 AM
  • Firstpage
    476
  • Lastpage
    481
  • Abstract
    Five different modes of high-field domains due to the field-dependent diffusion coefficient in a material with negative differential mobility (NDM) are discussed. Two of them are periodically traveling domain modes whose traveling directions are opposite each other. The remainder are trapped domain modes and are classified by the positions where the domains are trapped. For a bulk-effect device operated in the trapped domain mode, the static negative resistance (SNR) appears in its current-voltage characteristic.
  • Keywords
    Anodes; Cathodes; Doping; Electron mobility; Electron traps; Frequency; Impedance; Laboratories; Ohmic contacts; Poisson equations;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1973.17677
  • Filename
    1477334