DocumentCode :
1045176
Title :
Five different modes of high-field domains due to field-dependent carrier diffusion
Author :
Hasuo, Shinya ; Ohmi, Tadahiro ; Horimatsu, Tetsuo
Author_Institution :
Fujitsu Laboratories, Ltd., Kawasaki, Japan
Volume :
20
Issue :
5
fYear :
1973
fDate :
5/1/1973 12:00:00 AM
Firstpage :
476
Lastpage :
481
Abstract :
Five different modes of high-field domains due to the field-dependent diffusion coefficient in a material with negative differential mobility (NDM) are discussed. Two of them are periodically traveling domain modes whose traveling directions are opposite each other. The remainder are trapped domain modes and are classified by the positions where the domains are trapped. For a bulk-effect device operated in the trapped domain mode, the static negative resistance (SNR) appears in its current-voltage characteristic.
Keywords :
Anodes; Cathodes; Doping; Electron mobility; Electron traps; Frequency; Impedance; Laboratories; Ohmic contacts; Poisson equations;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1973.17677
Filename :
1477334
Link To Document :
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