DocumentCode
1045176
Title
Five different modes of high-field domains due to field-dependent carrier diffusion
Author
Hasuo, Shinya ; Ohmi, Tadahiro ; Horimatsu, Tetsuo
Author_Institution
Fujitsu Laboratories, Ltd., Kawasaki, Japan
Volume
20
Issue
5
fYear
1973
fDate
5/1/1973 12:00:00 AM
Firstpage
476
Lastpage
481
Abstract
Five different modes of high-field domains due to the field-dependent diffusion coefficient in a material with negative differential mobility (NDM) are discussed. Two of them are periodically traveling domain modes whose traveling directions are opposite each other. The remainder are trapped domain modes and are classified by the positions where the domains are trapped. For a bulk-effect device operated in the trapped domain mode, the static negative resistance (SNR) appears in its current-voltage characteristic.
Keywords
Anodes; Cathodes; Doping; Electron mobility; Electron traps; Frequency; Impedance; Laboratories; Ohmic contacts; Poisson equations;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1973.17677
Filename
1477334
Link To Document