DocumentCode
1045205
Title
Efficiencies of Schottky-barrier GaAs and both complementary structures of Si IMPATT diodes
Author
Tantraporn, Wirojana ; Yu, Se Puan
Author_Institution
General Electric Research and Development Center, Schenectady, N. Y.
Volume
20
Issue
5
fYear
1973
fDate
5/1/1973 12:00:00 AM
Firstpage
492
Lastpage
496
Abstract
Computer simulation results show that optimum dc to RF conversion efficiency is in descending order for Schottky-barrier GaAs, p+-n Si, and n+-p Si IMPATT diodes.
Keywords
Charge carrier processes; Computational modeling; Current density; Doping; Electron traps; Gallium arsenide; Radio frequency; Schottky diodes; Temperature; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1973.17680
Filename
1477337
Link To Document