DocumentCode :
1045205
Title :
Efficiencies of Schottky-barrier GaAs and both complementary structures of Si IMPATT diodes
Author :
Tantraporn, Wirojana ; Yu, Se Puan
Author_Institution :
General Electric Research and Development Center, Schenectady, N. Y.
Volume :
20
Issue :
5
fYear :
1973
fDate :
5/1/1973 12:00:00 AM
Firstpage :
492
Lastpage :
496
Abstract :
Computer simulation results show that optimum dc to RF conversion efficiency is in descending order for Schottky-barrier GaAs, p+-n Si, and n+-p Si IMPATT diodes.
Keywords :
Charge carrier processes; Computational modeling; Current density; Doping; Electron traps; Gallium arsenide; Radio frequency; Schottky diodes; Temperature; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1973.17680
Filename :
1477337
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1045205
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