Pulsed Laser Single-Event Effects in Highly Scaled CMOS Technologies in the Presence of Dense Metal Coverage

Author

Balasubramanian, Anupama ; McMorrow, Dale ; Nation, Sarah A. ; Bhuva, Bharat L. ; Reed, Robert A. ; Massengill, Lloyd W. ; Loveless, Thomas D. ; Amusan, Oluwole A. ; Black, Jeffrey D. ; Melinger, Joseph S. ; Baze, Mark P. ; Ferlet-Cavrois, Veronique ; Gai

Author_Institution

Radiat. Effects Group, Vanderbilt Univ., Nashville, TN

Volume

55

Issue

6

fYear

2008

Firstpage

3401

Lastpage

3406

Abstract

single-photon (SPA) and two-photon laser absorption (TPA) techniques are established as reliable, effective methods to study specific single-event (SE) phenomena in advanced CMOS technologies. However, dense metal-fill in these nanoscale processes can prevent the use of top-side SPA in some cases. This paper demonstrates a novel methodology enabling top-side laser SPA single-event effects (SEEs) measurements in the presence of dense metal-fill for a test circuit fabricated in a commercial 90 nm CMOS process and validates it using unimpeded, through-wafer TPA approach. This is achieved by measuring and comparing the SEU thresholds for the sample circuit using both techniques.

Keywords

CMOS integrated circuits; lasers; complementary metal-oxide-semiconductor; high scaled CMOS technologies; pulsed laser single-event effects; single-event effects measurements; single-photon laser absorption; size 90 nm; two-photon laser absorption; Absorption; CMOS process; CMOS technology; Circuit testing; Laboratories; Optical design; Optical pulses; Power lasers; Pulse circuits; Single event upset; Complementary metal-oxide-semiconductor (CMOS); laser; metal-fill; single event (SE); single-photon absorption (SPA); two-photon absorption (TPA);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2008.2007295

Filename

4723716