Title :
Analysis of Proton and Heavy-Ion Irradiation Effects on Phase Change Memories With MOSFET and BJT Selectors
Author :
Gasperin, Alberto ; Paccagnella, Alessandro ; Schwank, James R. ; Vizkelethy, Gyorgy ; Ottogalli, Federica ; Pellizzer, Fabio
Author_Institution :
Dipt. di Ing. dell´´Inf., Univ. di Padova, Padova
Abstract :
We study proton and heavy ion irradiation effects on phase change memories (PCM) with MOSFET and BJT selectors and the effect of the irradiation on the retention characteristics of these devices. Proton irradiation produces noticeable variations in the cell distributions in PCM with MOSFET selectors mostly due to leakage currents affecting the transistors. PCM with BJT selectors show only small variations after proton irradiation. PCM cells do not appear to be impacted by heavy-ion irradiation. Using high temperature accelerated retention tests, we demonstrate that the retention capability of these memories is not compromised by the irradiation.
Keywords :
MOSFET; bipolar transistors; phase change memories; BJT selectors; MOSFET selectors; heavy-ion irradiation effects; phase change memories; proton irradiation effects; Amorphous materials; CMOS technology; Flash memory; Laboratories; Leakage current; MOSFET circuits; Phase change materials; Phase change memory; Phased arrays; Protons; Chalcogenide material; GST; heavy ions; non-volatile memories; phase change memories (PCM); radiation effects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2008.2007639
