Analysis of Proton and Heavy-Ion Irradiation Effects on Phase Change Memories With MOSFET and BJT Selectors

We study proton and heavy ion irradiation effects on phase change memories (PCM) with MOSFET and BJT selectors and the effect of the irradiation on the retention characteristics of these devices. Proton irradiation produces noticeable variations in the cell distributions in PCM with MOSFET selectors mostly due to leakage currents affecting the transistors. PCM with BJT selectors show only small variations after proton irradiation. PCM cells do not appear to be impacted by heavy-ion irradiation. Using high temperature accelerated retention tests, we demonstrate that the retention capability of these memories is not compromised by the irradiation.