DocumentCode
1045314
Title
Silicon carbide/diamond heterostructure rectifying contacts
Author
Humphreys, T.P. ; Hunn, J.D. ; Patnaik, B.K. ; Parikh, N.R. ; Malta, D.M. ; Das, Krishanu
Author_Institution
North Carolina State Univ., Raleigh, NC, USA
Volume
29
Issue
15
fYear
1993
fDate
7/22/1993 12:00:00 AM
Firstpage
1332
Lastpage
1334
Abstract
The first results pertaining to the fabrication of an optically transparent SiC contact on naturally occurring semiconducting diamond C
Keywords
annealing; diamond; electrical contacts; electron beam deposition; elemental semiconductors; rectification; semiconductor diodes; semiconductor junctions; semiconductor materials; semiconductor-metal boundaries; silicon compounds; solid-state rectifiers; Al dots; Al-SiC-C; C; C substrate; I-V characteristics; O plasma; SiC film; electron cyclotron resonance; electron-beam evaporation; fabrication; heterostructure rectifying contacts; high-temperature annealing process; mesa heterostructure diodes; metal mask; optically transparent SiC contact; semiconducting diamond;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930893
Filename
274836
Link To Document