• DocumentCode
    1045340
  • Title

    Design considerations of high-efficiency GaAs IMPATT diodes

  • Author

    Su, S. ; Sze, S.

  • Author_Institution
    National Chiao Tung University, Taiwan, China
  • Volume
    20
  • Issue
    6
  • fYear
    1973
  • fDate
    6/1/1973 12:00:00 AM
  • Firstpage
    541
  • Lastpage
    543
  • Abstract
    The efficiency and noise of p+n1n2n+GaAs IMPATT diodes have been studied as functions of the doping ratio n1/n2(when n1=n2we have a conventional abrupt p-n junction). For n1/n2>1 there are tradeoffs between efficiency and noise. At 12 GHz, for example, with a ratio of 4 the efficiency is 25 percent and the noise measure is 3 dB higher then that of a conventional IMPATT diode.
  • Keywords
    Cameras; Doping; Gallium arsenide; Noise measurement; Schottky diodes; Semiconductor device noise; Semiconductor diodes; Signal to noise ratio; TV; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1973.17695
  • Filename
    1477352
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1045340