Title :
Design considerations of high-efficiency GaAs IMPATT diodes
Author :
Su, S. ; Sze, S.
Author_Institution :
National Chiao Tung University, Taiwan, China
fDate :
6/1/1973 12:00:00 AM
Abstract :
The efficiency and noise of p+n1n2n+GaAs IMPATT diodes have been studied as functions of the doping ratio n1/n2(when n1=n2we have a conventional abrupt p-n junction). For n1/n2>1 there are tradeoffs between efficiency and noise. At 12 GHz, for example, with a ratio of 4 the efficiency is 25 percent and the noise measure is 3 dB higher then that of a conventional IMPATT diode.
Keywords :
Cameras; Doping; Gallium arsenide; Noise measurement; Schottky diodes; Semiconductor device noise; Semiconductor diodes; Signal to noise ratio; TV; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1973.17695
