• DocumentCode
    1045348
  • Title

    High-Energy Heavy Ion Irradiation-Induced Structural Modifications: A Potential Physical Understanding of Latent Defects

  • Author

    Marinoni, Mathias ; Touboul, Antoine D. ; Zander, Damien ; Petit, Christian ; Wrobel, Frédéric ; Carvalho, Aminata M J F ; Arinero, Richard ; Ramonda, Michel ; Saigné, Frédéric ; Weulersse, Cecile ; Buard, Nadine ; Carriére, Thierry ; Lorfèvre, Eric

  • Author_Institution
    Inst. d´´Electron. du Sud, Univ. Montpellier 2, Montpellier
  • Volume
    55
  • Issue
    6
  • fYear
    2008
  • Firstpage
    2970
  • Lastpage
    2974
  • Abstract
    From annealing experiments performed on both irradiated SiO2-Si structures and MOS devices, swift heavy ions-induced morphological oxide defects are proposed to possibly act as latent defects.
  • Keywords
    MIS devices; defect states; silicon compounds; MOS devices; SiO2; high-energy heavy ion irradiation; induced structural modification; latent defect; swift heavy ions-induced morphological oxide defect; Annealing; Atomic force microscopy; Electric breakdown; Electron traps; Energy exchange; Force control; Interface states; Ionizing radiation; Leakage current; MOS devices; Heavy ion; MOS devices; SiO$_{2}$; isochronal annealing; latent defects; reliability; structural modifications;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2008.2006489
  • Filename
    4723725
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1045348