Title :
High-Energy Heavy Ion Irradiation-Induced Structural Modifications: A Potential Physical Understanding of Latent Defects
Author :
Marinoni, Mathias ; Touboul, Antoine D. ; Zander, Damien ; Petit, Christian ; Wrobel, Frédéric ; Carvalho, Aminata M J F ; Arinero, Richard ; Ramonda, Michel ; Saigné, Frédéric ; Weulersse, Cecile ; Buard, Nadine ; Carriére, Thierry ; Lorfèvre, Eric
Author_Institution :
Inst. d´´Electron. du Sud, Univ. Montpellier 2, Montpellier
Abstract :
From annealing experiments performed on both irradiated SiO2-Si structures and MOS devices, swift heavy ions-induced morphological oxide defects are proposed to possibly act as latent defects.
Keywords :
MIS devices; defect states; silicon compounds; MOS devices; SiO2; high-energy heavy ion irradiation; induced structural modification; latent defect; swift heavy ions-induced morphological oxide defect; Annealing; Atomic force microscopy; Electric breakdown; Electron traps; Energy exchange; Force control; Interface states; Ionizing radiation; Leakage current; MOS devices; Heavy ion; MOS devices; SiO$_{2}$; isochronal annealing; latent defects; reliability; structural modifications;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2008.2006489
