• DocumentCode
    1045352
  • Title

    Effect of donor density and temperature on the performance of stabilized transferred-electron devices

  • Author

    Talwar, Ashok K. ; Curtice, Walter R.

  • Author_Institution
    Ford Motor Company, Dearborn, Mich.
  • Volume
    20
  • Issue
    6
  • fYear
    1973
  • fDate
    6/1/1973 12:00:00 AM
  • Firstpage
    544
  • Lastpage
    550
  • Abstract
    A large-signal analysis is used to discuss the effect of lattice temperature and temperature gradients on the RF behavior of stabilized transferred-electron devices. The influence of the value of donor density and density gradients upon RF conversion efficiency is also discussed. It is shown that efficiency can be improved if either the heat sink is located at the anode or the donor density is increased near the anode end.
  • Keywords
    Anodes; Electrons; Gallium arsenide; Heat sinks; Laboratories; Lattices; Poisson equations; Radio frequency; Temperature; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1973.17696
  • Filename
    1477353
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1045352