Temperature Dependence of Digital SET Pulse Width in Bulk and SOI Technologies

Author

Shuming, Chen ; Bin, Liang ; Biwei, Liu ; Zheng, Liu

Author_Institution

Coll. of Comput. Sci., Nat. Univ. of Defense Technol., Changsha

Volume

55

Issue

6

fYear

2008

Firstpage

2914

Lastpage

2920

Abstract

Using three-dimensional mixed-mode simulation, temperature dependence of digital SET pulse width in bulk and PD SOI inverter chains has been studied. It was found that temperature has a very important impact on digital SET. Using a LET of 60 MeVmiddotcm² /mg, when temperature rises from -55 to 125^degC , the digital SET pulse width in bulk and floating SOI inverter chains rises remarkably, while in a SOI inverter chain with ideal body tie, the digital SET pulse width is almost constant with rising temperature. Detailed analysis showed that pulse broadening with rising temperature is primarily due to enhancement of bipolar amplification.

Keywords

CMOS digital integrated circuits; invertors; silicon-on-insulator; CMOS technologies; SOI inverter chains; bipolar amplification; bulk technologies; digital SET pulse width; single event effects; temperature -55 degC to 125 degC; temperature dependence; three-dimensional mixed-mode simulation; Circuit simulation; Pulse amplifiers; Pulse inverters; Pulse width modulation inverters; Single event upset; Space vector pulse width modulation; Temperature dependence; Temperature distribution; Temperature sensors; Testing; Bipolar amplification; bulk and SOI inverter chains; digital SET; mixed-mode simulation;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2008.2006980

Filename

4723729