Title :
Charge-based current model for CMOS gates
Author :
Wang, Jessie Hui ; Fan, J.T. ; Fen, W.S.
Author_Institution :
Nat. Taiwan Univ., Taipei, Taiwan
fDate :
7/22/1993 12:00:00 AM
Abstract :
A charge-based current model is introduced for the first time, which includes the current waveforms induced by non-active events. Time-domain current waveforms can be obtained and the results show good agreement with SPICE. Three error values, DC, Max I, and Max T, differ by no more than 10% from SPICE.
Keywords :
CMOS integrated circuits; integrated logic circuits; logic gates; semiconductor device models; CMOS gates; Charge-based current model; current waveforms; error values; non-active events;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930900
