DocumentCode
1045395
Title
Sensitivity of 0.1 mu m MOSFETs to manufacturing fluctuations
Author
Sitte, R. ; Dimitrijev, Sima ; Harrison, H.B.
Author_Institution
Griffith Univ., Nathan, Qld., Australia
Volume
29
Issue
15
fYear
1993
fDate
7/22/1993 12:00:00 AM
Firstpage
1345
Lastpage
1346
Abstract
A sensitivity analysis of 0.1 mu m MOSFETs to manufacturing fluctuations has been carried out. The analysis reveals that the electrical parameter sensitivity in deep submicrometre devices differs from the currently produced micrometre size devices, making a revision of the validity of conventional semiconductor manufacturing heuristics for future technology mandatory.
Keywords
insulated gate field effect transistors; semiconductor device manufacture; sensitivity analysis; 0.1 micron; MOSFETs; deep submicrometre devices; electrical parameter sensitivity; manufacturing fluctuations; semiconductor manufacturing heuristics; sensitivity analysis; submicron devices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930901
Filename
274844
Link To Document