DocumentCode :
1045407
Title :
(Al0.5Ga0.5)0.65In0.35P/Ga0.65In0.35P double-heterostructure orange light-emitting diodes
Author :
Lin, Jen-Fin ; Wu, Meng-Chyi ; Chang, C.-M. ; Lee, B.-J.
Author_Institution :
Nat. Tsing Hua Univ., Hsinchu, Taiwan
Volume :
29
Issue :
15
fYear :
1993
fDate :
7/22/1993 12:00:00 AM
Firstpage :
1346
Lastpage :
1347
Abstract :
Visible light-emitting diodes (LEDs) emitting at 615 nm and employing the AlGaInP/GaInP double heterostructure (DH) grown on a lattice-matched GaAs0.7P0.3 substrate have been fabricated for the first. The external quantum efficiency of 0.156% for the orange LEDs can be achieved by introducing the GaP material as the current spreader and window layer for the DH LEDs.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; light emitting diodes; (Al 0.5Ga 0.5) 0.65In 0.35P-Ga 0.65In 0.35P; 615 nm; DH LEDs; GaAs 0.7P 0.3 substrate; current spreader; double-heterostructure; external quantum efficiency; orange light-emitting diodes; visible light LED;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19930902
Filename :
274845
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1045407
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