DocumentCode :
1045418
Title :
0.25 × 106bit/in2NDRO coupled film memory elements
Author :
Chang, Hsu ; Mazzeo, Nicholas J. ; Romankiw, Lubomyr T.
Author_Institution :
IBM Corporation, Yorktown Heights, N.Y.
Volume :
6
Issue :
4
fYear :
1970
fDate :
12/1/1970 12:00:00 AM
Firstpage :
774
Lastpage :
778
Abstract :
The fabrication and operation of high-density (0.25 × 106bit/in2) nondestructive readout (NDRO) memory elements are described. The high density is made possible by coupled films and Permalloy keeper. The NDRO is made possible by multiple-pulse WRITE or hard-direction bias field. Typical performance parameters are 
mA, 
mA, and 
μV/3 ns. The small signal is detectable by multiple-pulse READ. When such memory elements are to be fabricated with peripheral circuits on the same Si chip, a self-contained chip will be obtained. Such chips could enjoy the same advantages as semiconductor memory chips such as few leads, modularity, amenability to bit organization, and possibility for error-correction, but would be capable of higher storage density due to simpler planar configuration.
mA, mA, and μV/3 ns. The small signal is detectable by multiple-pulse READ. When such memory elements are to be fabricated with peripheral circuits on the same Si chip, a self-contained chip will be obtained. Such chips could enjoy the same advantages as semiconductor memory chips such as few leads, modularity, amenability to bit organization, and possibility for error-correction, but would be capable of higher storage density due to simpler planar configuration.Keywords :
Magnetic film memories; NDRO memories; Conductive films; Costs; Coupling circuits; Fabrication; Lead compounds; Semiconductor films; Signal detection; Signal to noise ratio; Silicon; Substrates;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1970.1066989
Filename :
1066989
Link To Document :
