• DocumentCode
    1045426
  • Title

    ´High frequency´ quasiplanar GaInP/GaAs HBT with CBE selective collector contact regrowth

  • Author

    Zerguine, D. ; Launay, P. ; Alexandre, F. ; Benchimol, J.L. ; Etrillard, J.

  • Author_Institution
    CNET, Bagneux, France
  • Volume
    29
  • Issue
    15
  • fYear
    1993
  • fDate
    7/22/1993 12:00:00 AM
  • Firstpage
    1349
  • Lastpage
    1350
  • Abstract
    Quasiplanar GaInP/GaAs heterojunction bipolar transistors (HBTs) with selective regrowth of the collector contact are reported. Such devices have a planar surface topology which should allow large scale integration. The multilayer HBT structure and the selective regrown collector contact are realised by chemical beam epitaxy (CBE). Cutoff frequency and maximum oscillation frequency of 30 and 25 GHz respectively, have been obtained for devices with 2*15 mu m2 emitter-base junction area.
  • Keywords
    III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor growth; solid-state microwave devices; 25 GHz; 30 GHz; CBE selective collector contact regrowth; GaInP-GaAs; chemical beam epitaxy; heterojunction bipolar transistors; large scale integration; maximum oscillation frequency; multilayer HBT structure; planar surface topology; quasiplanar HBT;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930904
  • Filename
    274847
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1045426