DocumentCode :
1045503
Title :
Single-Event Data Analysis
Author :
Petersen, E.L.
Volume :
55
Issue :
6
fYear :
2008
Firstpage :
2819
Lastpage :
2841
Abstract :
Data needs to be carefully examined and sometimes corrected before used to predict upset rates in space. The data needs to be examined for illegitimate, systematic and random errors. Blunders and systematic errors are very likely during single-event data accumulation as repeated changes of device and ion or energy correspond to performing a large number of different experiments in a very short time. The most likely types of systematic error are due to dosimetry. They may occur occasionally, repeatedly if the dosimetry is not controlled, or with large standard deviations with controlled dosimetry. The dosimetry can be checked using golden chips, monitoring internal data consistency, occasional repetition of a measurement or calculation of observed versus expected values. The calculated linear energy transfer (LET) may need to be corrected if the device exhibits the funnel effect. The depth of the device leads to discontinuities in the data as ions are changed. The correction for this effect enables the depth of the device to be determined and places more values on the cross section curve. The data is often fitted using the Weibull function. This can be misleading as a single set of data can be fit with a variety of width and cross section values. It is often valuable to fit data with the log normal function, especially when studying the changes in the cross section curve with changes of some parameter. What appears to be a change of cross section is usually a change in the critical LET. The dependence of the critical LET on parameter can lead to a better understanding of the device.
Keywords :
data acquisition; dosimetry; particle accelerators; radiation hardening (electronics); dosimetry; linear energy transfer; single-event data analysis; single-event effect; single-event upset; systematic error; Data analysis; Dosimetry; Energy exchange; Instruments; Monitoring; Qualifications; Radiation detectors; Semiconductor device measurement; Single event upset; Testing; Single-event effect (SEE); single-event upset (SEU);
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2008.2007903
Filename :
4723742
Link To Document :
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