Title :
Direct Evidence of Secondary Recoiled Nuclei From High Energy Protons
Author :
Cellere, G. ; Paccagnella, A. ; Visconti, A. ; Beltrami, S. ; Schwank, J. ; Shaneyfelt, M. ; Lambert, D. ; Paillet, P. ; Ferlet-Cavrois, V. ; Baggio, J. ; Harboe-Sørensen, R. ; Blackmore, E. ; Virtanen, A. ; Fuochi, P.
Author_Institution :
Dipt. di Ing. dell´´ Inf., Univ. di Padova, Padova
Abstract :
The production of secondary recoiled particles from interactions between high energy protons and microelectronics devices was investigated. By using NAND Flash memories, we were able to directly obtain analog information on recoil characteristics. While our results qualitatively confirm the role of nuclear reactions, in particular of those with tungsten, a quantitative model based on Monte Carlo and device-level simulations cannot describe the observed results in terms of recoils from proton-W reactions.
Keywords :
NAND circuits; flash memories; integrated circuits; proton effects; radiation hardening (electronics); NAND flash memory; W; analog information; high energy proton -microelectronics device interactions; nuclear reactions; secondary recoiled nuclei; secondary recoiled particles; Electron accelerators; Ion accelerators; Ionizing radiation; Laboratories; Microelectronics; Particle production; Proton accelerators; Random access memory; Tungsten; X-rays; Floating gate memories; high energy protons; single event effects; space radiation;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2008.2007799
