Direct Evidence of Secondary Recoiled Nuclei From High Energy Protons

Author

Cellere, G. ; Paccagnella, A. ; Visconti, A. ; Beltrami, S. ; Schwank, J. ; Shaneyfelt, M. ; Lambert, D. ; Paillet, P. ; Ferlet-Cavrois, V. ; Baggio, J. ; Harboe-Sørensen, R. ; Blackmore, E. ; Virtanen, A. ; Fuochi, P.

Author_Institution

Dipt. di Ing. dell´´ Inf., Univ. di Padova, Padova

Volume

55

Issue

6

fYear

2008

Firstpage

2904

Lastpage

2913

Abstract

The production of secondary recoiled particles from interactions between high energy protons and microelectronics devices was investigated. By using NAND Flash memories, we were able to directly obtain analog information on recoil characteristics. While our results qualitatively confirm the role of nuclear reactions, in particular of those with tungsten, a quantitative model based on Monte Carlo and device-level simulations cannot describe the observed results in terms of recoils from proton-W reactions.

Keywords

NAND circuits; flash memories; integrated circuits; proton effects; radiation hardening (electronics); NAND flash memory; W; analog information; high energy proton -microelectronics device interactions; nuclear reactions; secondary recoiled nuclei; secondary recoiled particles; Electron accelerators; Ion accelerators; Ionizing radiation; Laboratories; Microelectronics; Particle production; Proton accelerators; Random access memory; Tungsten; X-rays; Floating gate memories; high energy protons; single event effects; space radiation;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2008.2007799

Filename

4723746