DocumentCode :
1045589
Title :
Method for plotting frequency cutoff measurements for GaAs varactor diodes
Author :
Orman, C.
Author_Institution :
Alpha Industries, Inc., Woburn, Mass.
Volume :
20
Issue :
7
fYear :
1973
fDate :
7/1/1973 12:00:00 AM
Firstpage :
653
Lastpage :
655
Abstract :
Frequency cutoff for GaAs varactor diodes of diffused-P+-n-epitaxial n+-substrate construction can be plotted so as to conveniently show dependence of diode cutoff as measured at 10 GHz on diode n-region thickness and substrate resistivity. The measured data fit a model for the diode where the zero bias junction capacitance 
is in series with a junction resistance Rj that is proportional to 
, and a resistance RX that is constant. Rj is the resistance of the diode n-region and the p+-diffused region, and is primarily dependent on the n-region thickness. RX is dependent on diode spreading resistance, and varies with substrate resistivity. RX is about 1 Ω for usual substrate material.
is in series with a junction resistance R , and a resistance RKeywords :
Capacitance; Cutoff frequency; Electric resistance; Electron devices; Frequency measurement; Gallium arsenide; Semiconductor diodes; Substrates; Thickness measurement; Varactors;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1973.17718
Filename :
1477375
Link To Document :
