• DocumentCode
    1045597
  • Title

    Calculations of Radiation Dose-Rate Sensitivity of Bipolar Transistors

  • Author

    Hjalmarson, Harold P. ; Pease, Ronald L. ; Devine, Roderick A B

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM
  • Volume
    55
  • Issue
    6
  • fYear
    2008
  • Firstpage
    3009
  • Lastpage
    3015
  • Abstract
    Mechanisms for dose-rate dependent effects of ionizing radiation are described. Bimolecular mechanisms are shown to produce reduced effects at high dose rates. Calculations using such mechanisms are shown to produce good agreement with data from devices affected by enhanced low dose-rate sensitivity (ELDRS).
  • Keywords
    bipolar transistors; bipolar transistors; enhanced low dose-rate sensitivity; ionizing radiation; radiation dose-rate sensitivity; Bipolar transistors; Charge carrier processes; Equations; Excitons; Hydrogen; Ionizing radiation; Kinetic theory; Laboratories; Potential energy; Spontaneous emission; Bimolecular reaction; ELDRS; bipolar junction transistor; cracking; dimerization; dose rate; excess base current; hole; hydrogen; interface trap; kinetics; proton; radiation; recombination; silicon dioxide;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2008.2007487
  • Filename
    4723749
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1045597