Title :
Defect density distribution for LSI yield calculations
Author :
Stapper, Charles H.
Author_Institution :
IBM Corporation, Essex Junction, Vt.
fDate :
7/1/1973 12:00:00 AM
Abstract :
The experimental determination of defect density distributions is described. These distributions are needed for calculating LSI yields. The defect densities appear to be distributed according to gamma distributions. An expression for the average yield for a semiconductor process is derived based on the results.
Keywords :
Capacitance; Conductivity; Contact resistance; Gallium arsenide; Large scale integration; Packaging; Semiconductor diodes; Skin; Substrates; Thermal resistance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1973.17719
