DocumentCode
1045607
Title
Transferred-electron oscillator device plane measurement
Author
Howes, M.J. ; Jeremy, M.L.
Author_Institution
University of Leeds, Leeds, England
Volume
20
Issue
7
fYear
1973
fDate
7/1/1973 12:00:00 AM
Firstpage
657
Lastpage
659
Abstract
The first complete circuit characterization of a GaAs transferred-electron device operated in the delayed domain mode is presented. The detailed nature of the device plane indicates a strong dependence of device conductance and capacitance on frequency and RF amplitude.
Keywords
Admittance; Economic forecasting; Electron devices; Injection-locked oscillators; Inspection; Integrated circuit yield; Logistics; Radio frequency; Semiconductor device modeling; Statistical distributions;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1973.17720
Filename
1477377
Link To Document