• DocumentCode
    1045617
  • Title

    Depletion region thicknesses in diffused junctions

  • Author

    Stevens, E.H.

  • Author_Institution
    University of Idaho, Moscow, Ida.
  • Volume
    20
  • Issue
    7
  • fYear
    1973
  • fDate
    7/1/1973 12:00:00 AM
  • Firstpage
    659
  • Lastpage
    660
  • Abstract
    Closed-form expressions are derived for total thickness of the depletion region and thickness of the depletion region on the n side of the junction. The expressions are applicable to n-p junction devices with either complementary error function or Gaussian impurity distributions. Depletion region thicknesses obtained by evaluation of the closed-form expressions are in excellent agreement with exact numerical calculations.
  • Keywords
    Boundary conditions; Closed-form solution; Electrostatics; Fabrication; Impurities; Linear approximation; Photovoltaic cells; Poisson equations; Solids; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1973.17721
  • Filename
    1477378
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1045617