Title :
Depletion region thicknesses in diffused junctions
Author_Institution :
University of Idaho, Moscow, Ida.
fDate :
7/1/1973 12:00:00 AM
Abstract :
Closed-form expressions are derived for total thickness of the depletion region and thickness of the depletion region on the n side of the junction. The expressions are applicable to n-p junction devices with either complementary error function or Gaussian impurity distributions. Depletion region thicknesses obtained by evaluation of the closed-form expressions are in excellent agreement with exact numerical calculations.
Keywords :
Boundary conditions; Closed-form solution; Electrostatics; Fabrication; Impurities; Linear approximation; Photovoltaic cells; Poisson equations; Solids; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1973.17721
