Title :
Studies of Ni-B as an electrochemical metal migration barrier
Author :
Ho, Syh-Ming ; Lian, Shy-Ming ; Chen, Ker-Ming ; Pan, Jing-Pin ; Wang, Tsung-Hsiung ; Hung, Aina
Author_Institution :
Mater. Res. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan
fDate :
6/1/1996 12:00:00 AM
Abstract :
The effectiveness of electroless Ni-B as a barrier metal to prevent the electrochemical migration between adjacent copper lines on a polyimide dielectric substrate was studied by measuring the resistance of the polyimide dielectric and by observing the electrochemical migration between the fine lines by reflective electron microscope after stress conditions. The rate-determining step associated with the electrochemical migration was also discussed
Keywords :
boron alloys; copper; diffusion barriers; electric resistance measurement; electromigration; electron microscopy; failure analysis; integrated circuit packaging; integrated circuit reliability; nickel alloys; voids (solid); Cu-NiB; IC packaging; barrier metal; electrochemical migration; fine lines; hillocks; migration barrier; migration induced failures; polyimide dielectric substrate; rate-determining step; reflective electron microscope; resistance measurement; stress conditions; voids; Circuit testing; Copper; Dielectric measurements; Dielectric substrates; Electrical resistance measurement; Electronic equipment testing; Failure analysis; Packaging; Polyimides; Stress measurement;
Journal_Title :
Components, Packaging, and Manufacturing Technology, Part A, IEEE Transactions on
