DocumentCode
1045635
Title
Increased breakdown voltage of silicon-on-insulator Schottky diodes
Author
Kang, B.R. ; Yoon, S.N. ; Cho, Young H. ; Cha, S.I. ; Choi, Y.I.
Author_Institution
Ajou Univ., Seoul, South Korea
Volume
29
Issue
15
fYear
1993
fDate
7/22/1993 12:00:00 AM
Firstpage
1381
Lastpage
1382
Abstract
A silicon-on-insulator Schottky diode with an etched mesa has been fabricated on silicon direct bonded wafer which exhibits a two-fold improvement in breakdown voltage. The fabrication method using V-groove etching requires no additional mask step. The breakdown voltage of the Schottky diodes with an etched mesa has been increased to 180 V, whereas it is 90 V for the planar Schottky diode.
Keywords
Schottky-barrier diodes; electric breakdown of solids; etching; semiconductor technology; semiconductor-insulator boundaries; 180 V; SOI; Schottky diodes; Si direct bonded wafer; V-groove etching; breakdown voltage; etched mesa; fabrication method;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930925
Filename
274867
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