• DocumentCode
    1045665
  • Title

    Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection

  • Author

    Black, J.D. ; Ball, D.R., II ; Robinson, W.H. ; Fleetwood, D.M. ; Schrimpf, R.D. ; Reed, R.A. ; Black, D.A. ; Warren, K.M. ; Tipton, A.D. ; Dodd, P.E. ; Haddad, N.F. ; Xapsos, M.A. ; Kim, H.S. ; Friendlich, M.

  • Author_Institution
    Inst. for Space & Defense Electron., Vanderbilt Univ., Nashville, TN
  • Volume
    55
  • Issue
    6
  • fYear
    2008
  • Firstpage
    2943
  • Lastpage
    2947
  • Abstract
    A well-collapse source-injection mode for SRAM SEU is demonstrated through TCAD modeling. The recovery of the SRAM´s state is shown to be based upon the resistive path from the p+ -sources in the SRAM to the well. Multiple cell upset patterns for direct charge collection and the well-collapse source-injection mechanisms are predicted and compared to SRAM test data.
  • Keywords
    SRAM chips; SRAM single event upset; direct charge collection; multiple node charge collection; single node charge collection; static random access memories; well-collapse source-injection mode; CMOS technology; Laboratories; MOSFET circuits; NASA; Photoconductivity; Random access memory; SRAM chips; Single event upset; Space technology; Testing; Heavy ion testing; SRAM; multiple cell upset; single event modeling;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2008.2007231
  • Filename
    4723757
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1045665