Laser-Induced Current Transients in Silicon-Germanium HBTs

Author

Pellish, Jonathan A. ; Reed, R.A. ; McMorrow, Dale ; Melinger, Joseph S. ; Jenkins, Phillip ; Sutton, Akil K. ; Diestelhorst, Ryan M. ; Phillips, Stanley D. ; Cressler, John D. ; Pouget, V. ; Pate, N.D. ; Kozub, John A. ; Mendenhall, Marcus H. ; Weller, R

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN

Volume

55

Issue

6

fYear

2008

Firstpage

2936

Lastpage

2942

Abstract

Device-level current transients are induced by injecting carriers using two-photon absorption from a subbandgap pulsed laser and recorded using wideband transmission and measurement equipment. These transients exhibit three distinct temporal trends that depend on laser pulse energy as well as the transverse and vertical charge generation location. The nature of the current transient is controlled by both the behavior of the subcollector-substrate junction and isolation biasing. However, substrate potential modulation, due to deformation of the subcollector-substrate depletion region, is the dominant mechanism affecting transient characteristics.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; lasers; HBT; SiGe; device-level current transients; heterojunction bipolar transistors; isolation biasing; laser-induced current transients; measurement equipment; subbandgap pulsed laser; subcollector-substrate junction; substrate potential modulation; transverse charge generation location; two-photon absorption; vertical charge generation location; wideband transmission; Absorption; Application software; Circuits; Consumer electronics; Germanium silicon alloys; Heterojunction bipolar transistors; NASA; Pulse measurements; Silicon germanium; Space technology; Current transient; SiGe HBT; electrostatic potential modulation; two-photon absorption;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2008.2007954

Filename

4723759