The calculation of the avalanche multiplication factor in silicon p—N junctions taking into account the carrier generation (thermal or optical) in the space-charge region

Author

Bulucea, Constantin D. ; Prisecaru, Dorel C.

Author_Institution

CCPCE/IPRS-Baneasa, Bucharest, Romania

Volume

20

Issue

8

fYear

1973

fDate

8/1/1973 12:00:00 AM

Firstpage

692

Lastpage

701

Abstract

The influence of carrier generation within the space-charge regions of silicon p-n junctions upon their breakdown characteristics is analyzed. Universal plots for the calculation of the total multiplication in one-sided silicon junctions versus voltage and substrate concentration are given, which take into account both injection and generation of initiating carriers. It is shown that the multiplication factor $M$ of practical (i.e., generation-dominated) silicon junctions differs from the pure hole-pure electron multiplication factors Mpand Mnand ranges between them, i.e., $M_{p} < M < M_{n}$ . Its calculated voltage dependence is well approximated by Miller\´s relationship with an exponent $n$ between 4 and 7 for impurity concentrations in the substrate between 10¹⁴and 10¹⁷cm^-3.

Keywords

Avalanche breakdown; Charge carrier processes; Equations; Germanium; Impurities; Marine vehicles; P-n junctions; Silicon; Thermal factors; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1973.17730

Filename

1477387