DocumentCode
1045725
Title
Integrated reverse-recovery model of the power bipolar diode for SPICE3
Author
Conway, N.J. ; Lacy, J.G.
Author_Institution
Univ. Coll. Dublin, Ireland
Volume
29
Issue
15
fYear
1993
fDate
7/22/1993 12:00:00 AM
Firstpage
1392
Lastpage
1394
Abstract
A new circuit-simulation model for the reverse-recovery behaviour of the high-power bipolar diode, based on the device physics, is described. The model is implemented directly into the SPICE3 circuit-simulator source code, leading to improvements in speed and accuracy.
Keywords
SPICE; power electronics; semiconductor device models; semiconductor diodes; SPICE3; circuit-simulation model; device physics; power bipolar diode; reverse-recovery model;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930933
Filename
274875
Link To Document