• DocumentCode
    1045736
  • Title

    Lumped element 12 GHz LNA MMIC using InGaAs/GaAs MODFETs with optimised gate width and reactive feedback

  • Author

    Bosch, Ricard ; Tasker, P.J. ; Schlechtweg, Michael ; Braunstein, J. ; Reinert, Wolfgang

  • Author_Institution
    Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
  • Volume
    29
  • Issue
    15
  • fYear
    1993
  • fDate
    7/22/1993 12:00:00 AM
  • Firstpage
    1394
  • Lastpage
    1395
  • Abstract
    A two-stage 12 GHz LNA has been realised as a lumped element MMIC on GaAs substrates using In0.25Ga0.75As channel PM-MODFETs. The gain is >17 dB and noise figure is <1.25 dB. Input (output) match is better than -21 DB (-14 qB). The MMIC design includes reactive feedback by source inductances and makes use of optimised gate widths for broad noise circles and easy impedance match.
  • Keywords
    III-V semiconductors; MMIC; feedback; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; 1.25 dB; 12 GHz; 17 dB; GaAs substrates; InGaAs-GaAs; LNA MMIC; MODFETs; SHF; low noise amplifier; lumped element; optimised gate width; reactive feedback; two-stage LNA;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930934
  • Filename
    274876
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1045736