Effect of Proton and Silicon Ion Irradiation on Defect Formation in GaAs

Author

Warner, Jeffrey H. ; Inguimbert, Christophe ; Twigg, Mark E. ; Messenger, Scott R. ; Walters, Robert J. ; Romero, Manuel J. ; Summers, Geoffrey P.

Author_Institution

Naval Res. Lab., Washington, DC

Volume

55

Issue

6

fYear

2008

Firstpage

3016

Lastpage

3024

Abstract

Electrical and structural changes in GaAs are monitored using electron beam induced current (EBIC) and transmission electron microscopy (TEM) measurements after irradiation by protons and silicon ions. It has been determined that higher energy protons (E ges 10 MeV) and silicon ions disordered regions that are electrically and structurally different than those produced by lower energy protons. The data suggest that these disordered regions are responsible for causing the deviations between experimental data and NIEL. From analyses of the recoil spectra, high energy recoils appear to be responsible for the formation of these disordered regions.

Keywords

EBIC; III-V semiconductors; gallium arsenide; ion recombination; radiation effects; transmission electron microscopy; GaAs; defect formation; displacement damage; electron beam induced current; ion irradiation; recoil spectrum; recombination centers; transmission electron microscopy measurements; Current measurement; Distributed control; Electron beams; Gallium arsenide; Ionization; Laboratories; Monitoring; Protons; Silicon; Transmission electron microscopy; Defect formation; EBIC; GaAs; NIEL; TEM; disordered regions; displacement damage; heavy ion; irradiation; recoil spectrum; recombination centers;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2008.2006266

Filename

4723764