High-Performance Transparent AZO TFTs Fabricated on Glass Substrate

High-performance transparent low-temperature top-gate type aluminum doped zinc oxide (AZO) thin-film transistors (TFTs) (W/L=100 or 10 μm) are successfully fabricated on glass substrate. All the process temperature is below 100°C. For VG=-2 to 5 V, the TFTs using sputtering deposit AZO layer at room temperature as channel layer exhibits excellent properties, such as a saturation mobility μs of 285 cm²/V·s, a linear field effect mobility μl of 143 cm²/V·s, a threshold voltage Vth of 0.9 V, a steep subthreshold swing of 108 mV/decade, a low off-state current value I_off of 5×10^-13 A, a high ON/OFF ratio of 2×10⁹ and a high transmittance of 82.5%. The results highlight that excellent device performance can be realized in AZO TFTs. Note that this is the best performance of AZO TFT ever reported.