DocumentCode
1045783
Title
Review and Analysis of the Radiation-Induced Degradation Observed for the Input Bias Current of Linear Integrated Circuits
Author
Dusseau, Laurent ; Bernard, Muriel ; Boch, Jérôme ; Velo, Yago Gonzalez ; Roche, Nicolas ; Lorfèvre, Eric ; Bezerra, Françoise ; Calvel, Philippe ; Marec, Ronan ; Saigné, Frédéric
Author_Institution
Inst. d´´Electron. du Sud, Univ. Montpellier II, Montpellier
Volume
55
Issue
6
fYear
2008
Firstpage
3174
Lastpage
3181
Abstract
It is shown that the variety of shapes of the input current versus dose curve observed in several ICs is due to circuit effects, depending on the architecture, the value of the currents and the bias conditions. When stages are cascaded, the degradation of the second stage may add or subtract current to the collector current of the input transistor. The variations of the collector currents can be evaluated using the variations of the supply current. It is then possible to model the compensation effects using basic equations and study the impact of irradiation conditions. In some cases, the effect of biasing the circuit during irradiation is to reduce the compensation mechanism leading to an stronger increase in the input current. When a peak shaped degradation curve is recorded, annealing may either induce an additional degradation or a recovery depending on which side of the peak irradiation has brought the circuit.
Keywords
analogue integrated circuits; radiation effects; collector current; input bias current; input transistor; linear integrated circuits; radiation-induced degradation; Analog integrated circuits; Annealing; Bipolar integrated circuits; Bipolar transistors; Circuit testing; Current supplies; Degradation; Equations; Shape; Temperature sensors; Annealing; bipolar transistors; circuit effects; dose rate; integrated circuits (ICs); total dose;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2008.2006835
Filename
4723768
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