DocumentCode :
1045793
Title :
Physical Mechanisms of Ion-Induced Stuck Bits in the Hyundai 16M 
4 SDRAM
Author :
Edmonds, L.D. ; Scheick, L.Z.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA
Volume :
55
Issue :
6
fYear :
2008
Firstpage :
3265
Lastpage :
3271
Abstract :
It was previously thought that stuck bits in the Hyundai 16M times 4 SDRAM were caused by micro-dose. It is argued here that the correct mechanism is micro (i.e., from a single particle hit) displacement damage, which creates a leakage current that drains the storage capacitor.
Keywords :
DRAM chips; radiation hardening (electronics); SDRAM; displacement damage; ion-induced stuck bits; leakage current; single event effects; storage capacitor; Capacitors; Degradation; Leakage current; Logic circuits; Logic testing; Performance evaluation; Propulsion; Protons; SDRAM; Space technology; Displacement damage; single event effects;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2008.2006902
Filename :
4723769
Link To Document :
