DocumentCode
1045876
Title
High-frequency limitations of abrupt-junction FET´s
Author
Das, Mukunda B. ; Schmidt, Pierre
Author_Institution
Pennsylvania State University, University Park, Pa.
Volume
20
Issue
9
fYear
1973
fDate
9/1/1973 12:00:00 AM
Firstpage
779
Lastpage
792
Abstract
This paper represents analytical results concerning the high-frequency limitations of FET\´s of junction-gate or Schottky-gate constructions. The intrinsic 
parameters are calculated in closed form using the analog RC transmission line method. The bias dependence of various characteristic factors in the y parameters expressions are presented graphically. Equivalent networks including both the intrinsic and extrinsic resistance-capacitance elements are presented and used to calculate the power-gain and frequency limitations of FET\´s.
parameters are calculated in closed form using the analog RC transmission line method. The bias dependence of various characteristic factors in the y parameters expressions are presented graphically. Equivalent networks including both the intrinsic and extrinsic resistance-capacitance elements are presented and used to calculate the power-gain and frequency limitations of FET\´s.Keywords
Admittance; Cutoff frequency; FETs; Laboratories; Parasitic capacitance; Power transmission lines; Propagation constant; Solid state circuits; Transconductance; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1973.17746
Filename
1477403
Link To Document