Novel Total Dose and Heavy-Ion Charge Collection Phenomena in a New SiGe HBT on >Thin-Film SOI Technology

Author

Bellini, Marco ; Phillips, Stanley D. ; Diestelhorst, Ryan M. ; Cheng, Peng ; Cressler, John D. ; Marshall, Paul W. ; Turowski, Marek ; Avenier, Grégory ; Chantre, Alain ; Chevalier, Pascal

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA

Volume

55

Issue

6

fYear

2008

Firstpage

3197

Lastpage

3201

Abstract

We investigate radiation-induced effects on the DC, AC and thermal characteristics of high-performance SiGe HBTs fabricated on thin-film SOI. TCAD simulations indicate novel heavy-ion charge collection phenomena resulting from the unique C_BE^BC device layout of this technology platform.

Keywords

heterojunction bipolar transistors; silicon-on-insulator; thin film transistors; HBT; heavy-ion charge collection; heterojunction bipolar transistors; radiation-induced effects; silicon-on-insulator; thin-film SOI technology; total dose; Germanium silicon alloys; Heterojunction bipolar transistors; Isolation technology; Protons; Pulse width modulation; Radiation hardening; Silicon germanium; Silicon on insulator technology; Single event upset; Space technology; C-SiGe; Heterojunction bipolar transistors; SiGe HBT; TCAD; radiation effects; silicon-on-insulator (SOI);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2008.2005108

Filename

4723777