Title :
Novel Total Dose and Heavy-Ion Charge Collection Phenomena in a New SiGe HBT on >Thin-Film SOI Technology
Author :
Bellini, Marco ; Phillips, Stanley D. ; Diestelhorst, Ryan M. ; Cheng, Peng ; Cressler, John D. ; Marshall, Paul W. ; Turowski, Marek ; Avenier, Grégory ; Chantre, Alain ; Chevalier, Pascal
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
Abstract :
We investigate radiation-induced effects on the DC, AC and thermal characteristics of high-performance SiGe HBTs fabricated on thin-film SOI. TCAD simulations indicate novel heavy-ion charge collection phenomena resulting from the unique CBEBC device layout of this technology platform.
Keywords :
heterojunction bipolar transistors; silicon-on-insulator; thin film transistors; HBT; heavy-ion charge collection; heterojunction bipolar transistors; radiation-induced effects; silicon-on-insulator; thin-film SOI technology; total dose; Germanium silicon alloys; Heterojunction bipolar transistors; Isolation technology; Protons; Pulse width modulation; Radiation hardening; Silicon germanium; Silicon on insulator technology; Single event upset; Space technology; C-SiGe; Heterojunction bipolar transistors; SiGe HBT; TCAD; radiation effects; silicon-on-insulator (SOI);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2008.2005108
