Title :
The effect of cathode-notch doping profiles on supercritical transferred-electron amplifiers
Author :
Charlton, R. ; Hobson, G.S.
Author_Institution :
University of Sheffield, Sheffield, England
fDate :
9/1/1973 12:00:00 AM
Abstract :
The results of computer simulations are presented to describe the stabilization and amplification performance of supercritically doped transferred-electron devices that contain a cathode-conductivity notch. Broad agreement is found between the theoretical and experimental behavior. Nonlinear conversion of amplitude modulation (AM) to phase modulation (PM) is less than 5°/dB.
Keywords :
Anodes; Cathodes; Circuits; Computer simulation; Conductivity; Doping profiles; Phase modulation; Quasi-doping; Schottky diodes; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1973.17749
