DocumentCode
1045902
Title
The effect of cathode-notch doping profiles on supercritical transferred-electron amplifiers
Author
Charlton, R. ; Hobson, G.S.
Author_Institution
University of Sheffield, Sheffield, England
Volume
20
Issue
9
fYear
1973
fDate
9/1/1973 12:00:00 AM
Firstpage
812
Lastpage
817
Abstract
The results of computer simulations are presented to describe the stabilization and amplification performance of supercritically doped transferred-electron devices that contain a cathode-conductivity notch. Broad agreement is found between the theoretical and experimental behavior. Nonlinear conversion of amplitude modulation (AM) to phase modulation (PM) is less than 5°/dB.
Keywords
Anodes; Cathodes; Circuits; Computer simulation; Conductivity; Doping profiles; Phase modulation; Quasi-doping; Schottky diodes; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1973.17749
Filename
1477406
Link To Document