DocumentCode :
1045908
Title :
Single-Event Effects on Combinational Logic Circuits Operating at Ultra-Low Power
Author :
Casey, M.C. ; Amusan, O.A. ; Nation, S.A. ; Loveless, T.D. ; Balasubramanian, A. ; Bhuva, B.L. ; Reed, R.A. ; McMorrow, D. ; Weller, R.A. ; Alles, M.L. ; Massengill, L.W. ; Melinger, J.S. ; Narasimham, B.
Author_Institution :
Electr. Eng. & Comput. Sci. Dept., Vanderbilt Univ., Nashville, TN
Volume :
55
Issue :
6
fYear :
2008
Firstpage :
3342
Lastpage :
3346
Abstract :
The minimum laser energy required to cause sustained harmonic oscillations in a 201-stage ring oscillator varies little with increasing power supply voltage when operating in the subthreshold region. These small changes in threshold laser energy in the subthreshold region suggest that the cross-section curves as a function of power supply voltage remain relatively constant. Simulations show that the minimum pulsewidth required to generate higher-order oscillations decreases as operating voltage increases. Single-event transients are wider when circuits are operating in the subthreshold region than when operating at the nominal power supply voltages. Narrower single-event transients result for strikes on PMOS transistors as compared to those for strikes on NMOS devices in the subthreshold region; the opposite is observed when circuits are operating at the nominal power supply voltages.
Keywords :
MOSFET circuits; combinational circuits; low-power electronics; radiation effects; NMOS devices; PMOS transistors; combinational logic circuits; cross-section curves; harmonic oscillations; power supply voltage; single-event effects; single-event transients; subthreshold region; threshold laser energy; Circuit simulation; Combinational circuits; Laser transitions; Power lasers; Power supplies; Power system harmonics; Ring lasers; Ring oscillators; Threshold voltage; Voltage-controlled oscillators; CMOS circuits; digital circuits; radiation effects; radiation effects in ICs; single event transients; single-event effects;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2008.2005901
Filename :
4723780
Link To Document :
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