• DocumentCode
    1045942
  • Title

    Tapered windows in SiO2by ion implantation

  • Author

    Haszko, S.E.

  • Volume
    20
  • Issue
    9
  • fYear
    1973
  • fDate
    9/1/1973 12:00:00 AM
  • Firstpage
    840
  • Lastpage
    840
  • Abstract
    The enhanced etch rate of ion damaged SiO2has been used to controllably taper steps in thermally grown SiO2. A 50-keV Ar+implantation with a dose of 3 × 1013/cm2produces a uniform taper of 35-45° with no vertical step at the top edge of the window. These results are observed by viewing the sample on edge with a scanning electron microscope (SEM). The taper angle of the oxide varies from near vertical (90°) at a dose of 4 × 1012/cm2to very small angles at large dosages.
  • Keywords
    Annealing; Argon; Electron beams; Fabrication; Inorganic materials; Resists; Scanning electron microscopy; Sputter etching; Stress; Surface cracks;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1973.17753
  • Filename
    1477410
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1045942