Title :
Tapered windows in SiO2by ion implantation
fDate :
9/1/1973 12:00:00 AM
Abstract :
The enhanced etch rate of ion damaged SiO2has been used to controllably taper steps in thermally grown SiO2. A 50-keV Ar+implantation with a dose of 3 × 1013/cm2produces a uniform taper of 35-45° with no vertical step at the top edge of the window. These results are observed by viewing the sample on edge with a scanning electron microscope (SEM). The taper angle of the oxide varies from near vertical (90°) at a dose of 4 × 1012/cm2to very small angles at large dosages.
Keywords :
Annealing; Argon; Electron beams; Fabrication; Inorganic materials; Resists; Scanning electron microscopy; Sputter etching; Stress; Surface cracks;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1973.17753
