Title :
Study of Latent Damage in Power MOSFETs Caused by Heavy Ion Irradiation
Author :
Ikeda, Naomi ; Kuboyama, Satoshi ; Satoh, Yohei ; Tamura, Takashi
Author_Institution :
Japan Aerosp. Exploration Agency, Tsukuba
Abstract :
The latent damages were investigated for power MOSFETs irradiated by high LET heavy ions. It was demonstrated that the post irradiation leakage current in damaged gate oxide was determined by the initial gate stress after the irradiation and the damage was stable even after a million of gate stress repetition.
Keywords :
leakage currents; power MOSFET; radiation effects; damaged gate oxide; heavy ion irradiation; high LET heavy ions; initial gate stress; latent damage; post irradiation leakage current; power MOSFET; Dielectric breakdown; Electric breakdown; Epitaxial layers; Leakage current; MOSFETs; Neck; Prototypes; Stress; Synchrotrons; Voltage; Heavy ion; latent damage; power MOSFET;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2008.2007902
